NTE26 Silicon NPN Transistor Low Noise Audio Amplifier
Features: D VCEO = 120V (Min) D Low Noise: = 1dB (Typ), 10dB (Max) Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -100mA Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacitance Noise Symbol ICBO IEBO hFE fT Cob NF Test Conditions VCB = 120V, IE = 0 VEB = 5V, IC = 0 VCE = 6V, IC = 2mA VCE = 6V, IC = 1mA VCB = 10V, IE = 0, f = 1MHz VCE = 6V, IC = 0.1mA, f = 1kHz, rg = 10k Min - - 350 - - - - Typ - - - - 100 3.0 1.0 Max 0.1 0.1 700 0.3 - - 10 V MHz pF dB Unit A A
VCE(sat) IC = 10mA, IB = 1mA
.165 (4.2) Max .126 (3.2) Max .071 (1.8) .500 (12.7) Max
ECB .050 (1.27) .050 (1.27) .035 (0.9)
.102 (2.6) Max
|
